SCOTTSDALE, Ariz., and SUZHOU, China — December 2, 2025 — Leads & Copy — onsemi and Innoscience have signed a memorandum of understanding to explore expanding the production of gallium nitride (GaN) power devices using Innoscience’s 200mm GaN-on-silicon process.
The collaboration seeks to combine onsemi’s system integration, drivers, and packaging expertise with Innoscience’s GaN wafers and high-volume manufacturing leadership to bring cost-effective, energy-efficient solutions to market faster and accelerate GaN adoption.
The non-binding MOU outlines a strategic partnership, including wafer procurement and extended collaboration, leveraging onsemi’s GaN power solutions and Innoscience’s wafer manufacturing.
The partnership is targeting the projected $2.9 billion total addressable market by 2030 for GaN power devices, with the potential value in the hundreds of millions of dollars for both companies.
The arrangement is expected to assist onsemi and Innoscience in their efforts to deliver customer value by combining onsemi’s expertise in packaging, drivers, and systems integration with Innoscience’s proven wafer manufacturing capabilities.
The two companies’ technologies together are expected to enable smaller, more efficient GaN solutions for industrial, automotive, telecom infrastructure, consumer, and AI data center markets.
GaN semiconductor devices offer higher switching speeds, smaller form factors, and lower energy losses to deliver more power in less space. The collaboration seeks to overcome barriers to achieve high-volume, worldwide deployment of optimized GaN solutions for mainstream markets such as:
- Industrial: motor drives for robotics, solar microinverters, and optimizers
- Automotive: DC-DC converters, synchronous rectification
- Telecom Infrastructure: DC-DC and point-of-load converters
- Consumer and Mass Market: power supplies, adaptors, DC-DC converters, motor drives, audio, light e-mobility, power tools, robotics
- AI Data Center: intermediate bus converters, DC-DC converters, battery backup units
According to onsemi, the collaboration with Innoscience would enable faster time to market, scalable manufacturing, and lower system costs for its customers. Sampling is expected to begin in the first half of 2026.
Antoine Jalabert, Vice President of Corporate Strategy at onsemi, said that the collaboration with Innoscience will allow them to access the industry’s largest GaN production footprint and quickly scale their GaN offerings for customers worldwide to enable broader adoption in mainstream power applications.
Yi Sun, Senior Vice President, Product & Engineering at Innoscience, said that Innoscience is excited to explore a strategic collaboration opportunity with onsemi, to expand and accelerate the adoption of GaN power worldwide, and to create a system integration platform with onsemi’s broad portfolio.
onsemi offers intelligent power and sensing technologies that solve the world’s most complex challenges and leads the way to creating a safer, cleaner and smarter world. onsemi is included in the Nasdaq-100 Index® and S&P 500® index.
Innoscience’s GaN products have achieved market share in multiple low, medium and high voltage applications, with GaN process nodes covering 15V to 1200V. Innoscience’s products are known for reliability, performance, and functionality in consumer, automotive, data center, and renewable energy sectors.
Contact:
onsemi
Michael Mullaney
michael.mullaney@onsemi.com
+1 838-289-7314
Source: onsemi
